发明名称 Photonic-integrated-circuit fabrication process
摘要 An improved process for fabricating photonic circuits is disclosed. The inventive process starts with a growth of a base wafer comprising a stack of epitaxial layers of various materials. At least a portion of each of the material layers will ultimately be a functioning part of any of a number of devices which will form the PIC or will serve a role in at least one of the fabrication processing steps. Specific inventive processing steps are addressed to (1) interconnecting passive waveguides, active devices, and grating filtering regions without the substantial optical discontinuities which appear in the prior art, and (2) etching continuous waveguide mesas to different depths in different regions of the PIC so as to optimize the performance of each PIC device.
申请公布号 US5288659(A) 申请公布日期 1994.02.22
申请号 US19920944628 申请日期 1992.09.14
申请人 AT&T BELL LABORATORIES 发明人 KOCH, THOMAS L.;KOREN, UZIEL
分类号 G02B6/12;G02B6/124;G02B6/136;H01L21/8252;H01L27/15;H01S5/00;H01S5/026;H01S5/12;(IPC1-7):H01L21/308;H01S3/18 主分类号 G02B6/12
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