Static random access memory device with high speed differential amplifier coupled with digit line pair through capacitors

摘要

A static type random access memory device is equipped with sense amplifier circuits for rapidly developing small differential voltage levels respectively indicative of data bits read out from selected memory cells to digit line pairs, and the input nodes of each sense amplifier circuit are coupled with the associated digit line pair through a pair of capacitors, wherein the digit line pairs and the input nodes are respectively precharged to a high voltage level and an intermediate voltage level so that the sense amplifier circuits start on developing immediately after activation thereof.