发明名称 |
Semiconductor device capable of blocking contaminants |
摘要 |
A semiconductor device comprises a semiconductor substrate having first and second major surfaces, semiconductor elements formed on the first surface of the semiconductor substrate, and a blocking layer formed within the substrate at a given distance from the second major surface for blocking the passage of heavy metals through the semiconductor substrate.
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申请公布号 |
US5289031(A) |
申请公布日期 |
1994.02.22 |
申请号 |
US19920986895 |
申请日期 |
1992.12.08 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
WATANABE, MASAHARU;KUNISHIMA, YOSHIKO |
分类号 |
H01L21/322;H01L21/762;H01L21/8238;(IPC1-7):H01L29/74;H01L23/58;H01L29/30 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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