HIGH IC AND MANUFACTURING METHOD THEREOF

摘要

The structure comprises a drain and a source of the second conduction which are separated apart by a semiconductor substrate of the first conduction and a channel area within the substrate, the first impurity doping area of the first conduction separated apart from the sides of the drain and the source within the channel area, and the second impurity doping area of the first conduction separated apart from the sides of the drain and the source and having the maximum concentration value of impurity in the bottom of the first impurity doping area.