| 摘要 |
The method includes a process for depositing an oxide film (30) after shaping a field oxide film (20) for isolating element on the P-type substrate (10) and removing an oxide film (30) from gate shaped section, a process for forming a gate polycrystal silicon (50) on the section where the oxide film is removed by etch-backing and depositing polycrystal silicon after injecting the channel ions to the substrate (10) and growing a gate oxide film (40), and a process for forming a source and a drain by injecting the ions after removing the oxide field (30).
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