| 摘要 |
PURPOSE:To improve the light damage resistance in particular among optical characteristics and to impart high functionability in the waveguide. CONSTITUTION:At least one kind or >=2 kinds selected from H, Be, B, C, Si, N and P are implanted into the LiNbO3 single crystal thin film of the LN/LT waveguide or are exchanged with a part of the constituting elements in the thin film, by which the light damage resistance among the optical characteristics of the LN/LT waveguide is further improved. The high functionality is imparted to the waveguide by approximating the deltano/deltane thereof to 1. |
