HIGH-LOAD RESISTOR OF SEMICONDUCTOR DEVICE

摘要

The method for maximising the resistance of the polysilicon line resistor by making the line width and depth narrower than minimum ones processed by the existing exposing technology comprises the steps of: (a) forming a cell isolation layer having a U shaped groove formed on the inside of the trench; (b) forming a polysilicon layer as the load resistor on the inside of the groove; (c) forming an insulation layer on the whole region except contact holes formed on both upper ends of the polysilicon layer; and (d) forming contact pads connected to each other through the contact holes.