| 摘要 |
<p>PURPOSE:To improve the yield of production by drastically lessening the possibility that dust sticks to substrates during the transfer thereof by adding a simple modification to the constitution of the thin-film transistor (TFT) matrix and the process for production thereof. CONSTITUTION:A first layer conductive film and second layer conductive film are formed on a transparent insulator substrate 1 and only the second layer conductive film is patterned to form second layer gate electrodes 22A and second layer gate bus lines 22B. The treatment to peel and remove the resist film at the time of subjecting the second layer conductive film to the above- mentioned patterning in the state of allowing the first layer conductive film to remain and the transfer of the transparent insulator substrate 1 to a film forming device and the patterning or selective insulating of the first layer conductive film with the second layer gate electrodes 22A and the second layer gate bus lines 22B as a mask within the film forming device are executed, by which the first layer gate electrodes 21A and the first layer gate bus lines 21B are formed. The various thin films necessary for forming the TFTs are thereafter formed.</p> |
