| 摘要 |
PURPOSE:To eliminate influence of charge to be stored on a surface of a wafer transiently by etching by a dry etching unit at the time of manufacturing to an active region of an element through inner interconnections in a bonding pad electrode of a semiconductor device having multilayer metal interconnections. CONSTITUTION:A bonding pad base electrode 13 and an inner interconnection 14 are separately provided, a bonding pad electrode 18 is formed on the electrode 13 via an upper interconnection layer, and the electrode 13 is connected to the interconnection 14. In this case, an area of a contact opening 17 at the side of the interconnection 14 is set to 1/10 or less of that of a contact opening 16 at the side of the electrode 18. |
