| 摘要 |
PURPOSE: To provide a process for manufacturing programmable anti-fuse elements with very low resistance, affixed antimony (Sb) to at least one of the anti-fuse element electrodes. CONSTITUTION: When Sb is affixed on anti-fuse electrodes 11 and 13, the width of a depletion layer with dopant impurities is narrowed, and highly concentrated n<+> -dopant occurs in the anti-fuse electrodes 11 and 13. Thereby, an intermediate dielectric layer 12 is dielectrically broken down because the required voltage between the electrodes 11 and 13 is lowered, consequently each electrode 11 and 13 is programmed or short-circuits each other. |
