| 摘要 |
<p>The method comprises a step for shaping an n+ layer by diffusing phosphorus in front of p type single crystal wafer, a step for shaping a back surface electrode by using a paste to which aluminum (Al) and silicon (Si) is added a step for shaping the front electrode by using silver paste (Ag Paste) after drying it a step for heating the back surface and the front surface electrodes at the front electrode heating temperature after drying.</p> |
