| 摘要 |
A ceramic package type semiconductor device (30, 50, 60, 70, 80) comprising: a ceramic substrate (32, 52, 72) having a wiring pattern layer (37, 57, 77) formed on a top surface thereof; at least one semiconductor element (31, 51a-51c, 71) mounted on the ceramic substrate with a top face thereof facing downward and electrically connected to the wiring pattern layer; a metal cap (33, 53, 73) having at least one through-hole (33c, 53c1-53c6, 73c) corresponding to an external size of the semiconductor element and an end portion (33b, 53b, 73b) thereof soldered to the top surface of the ceramic substrate, so that a top surface of the metal cap and a bottom surface of the semiconductor element fitting into the through-hole form a flat plane: and a heatsink member comprising a plate portion (35a, 55a, 75) which is soldered to the flat plane of the metal cap (33, 53, 73) and the semiconductor element (31, 51, 71) to complete a hermetic sealing of the semiconductor element. |
