| 摘要 |
PURPOSE:To form a gate insulating film wherein its thickness for a transistor in a high-withstand voltage peripheral circuit is different from that for a transistor in an ordinary peripheral circuit without increasing a resist process. CONSTITUTION:After an element isolation and insulating film 2 has been formed on a semiconductor substrate 1, a first insulating film 3 is formed. Then, after a first electrode 4 has been formed, the first insulating film 3 in an exposed peripheral circuit and in a high-withstand voltage circuit is etched. Then, after a second insulating film 5 has been formed, a second electrode 6 is formed. Then, the second insulating film 5 which is exposed in the peripheral circuit and in the highwithstand voltage circuit is etched. Then, after a third insulating film 7 has been formed, gate electrodes 4, 6 for a memory cell are patterned. Then, after the first exposed insulating film 3 has been etched, a side-face insulating film 9 is formed. Then, shallow source-drains 10 and deep source- drains 11 are formed. Then, after an interlayer insulating film 12 has been formed, a metal interconnection 14 is formed. |
