| 摘要 |
PURPOSE:To obtain a reliable laser element with which characteristics of a semiconductor laser can be evaluated efficiently in a on-wafer state. CONSTITUTION:Cleavage induction grooves 14 are formed between semiconductor lasers 8 and evaluation photodiodes 9 excluding waveguide parts 15, laser edge faces 10 are formed on the evaluation photodiodes 9 by dryetching, and a characteristic evaluation is conducted on the semiconductor lasers 8 in an on-wafer state using the above-mentioned material as a resonator edge face. After evaluation, a laser single element with a cleavage surface is obtained by cleaving the semiconductor lasers 8. As a result, a characteristic evaluation can be conducted in an on-wafer state by the formation of the characteristic evaluation laser edge face by dry-etching, and as the laser element is obtained after evaluation, a highly reliable semiconductor laser can be obtained. |
