| 摘要 |
PURPOSE:To provide a positive resist material for high energy beam exposure having high sensitivity and resolution and excellent in process adaptivity. CONSTITUTION:In a binary chemically amplified positive resist material composed of a base polymer and an acid generating agent or, if necessary, a ternary chemically amplified positive resist material into which a dissolution inhibiting agent is added, an organic dehydrating agent expressed by a formula (chem.1), R-N=C=N-R' (each of R, R' is the same or different and is hydrocarbon group or aromatic group), or a formula (chem.2), R''-CO-R''' (each of R'', R''' is the same or different and is hydrocarbon group, aromatic group or these nitrogen- containing substituted group and at least one of R'' and R''' is nitrogen-contain group) is added. The material is particularly available for fine working by electron beam or far ultraviolet ray. |
