RESIST FILM, FILM MATERIAL AND FORMING METHOD, PATTERN FORMING METHOD, AND SEMICONDUCTOR DEVICE

摘要

PURPOSE:To protect a resist film from a decrease in acid concentration after an exposure step, and increase controllability in rectangle shape and in measurements, by forming a resist coating film over a chemically multiplying resist film before the exposure step, and restraining the chemically multiplying resist film from contact with an atmosphere after the exposure step. CONSTITUTION:A chemically multiplying positive-type resist film 2 is formed on a semiconductor substrate 1. Then, a resist coating film 9 containing a diffusion-resistant organic acid 8 made of a compound including a sulphonic or carboxylic group is applied to the resist film 2 in a spin coating method. The resist coating film 9 resists absorbing a far infrared ray, and is easily removable at a development step. An excimer laser beam 3 is cast through the resist coating film 9 to the resist film 2 to generate a proton acid 5. The substrate 1 is put in a heating step so that the resist coating film 9 is made more soluble in an alkaline developer. Then, an irradiated part 6 by the excimer laser beam 3 and the resist coating film 9 are solved out using the alkaline developer with an adequate concentration.