| 摘要 |
<p>PURPOSE:To obtain a semiconductor laser device having less irregularity in the quantity of light received by the light-receiving element from the back side of a semiconductor laser element. CONSTITUTION:A light-receiving element 7 is placed on the first lead 1 having a positioning means, and a semiconductor laser element 12, having the main emission surface on the forward direction, is placed on the light-receiving element 7 or on the first lead 1 located in front of the light-receiving element 7. The area ranging from the neighborhood of the backside of the semiconductor laser element 12 to the light-receiving surface of the light-receiving element 7 is coated with a translucent resin 19. The first and second metal fine wires 16 and 17, with which the semiconductor laser element 12, the second lead 13, the light-receiving element 7 and the third lead 14 are connected respectively, are provided sorting to right and left against the optical axis center line of the semiconductor laser element.</p> |
