| 摘要 |
<p>PURPOSE:To provide a semiconductor vapor growing apparatus in which a semiconductor device having uniform characteristics (oscillation wavelength distribution, etc.) can be generated by making a temperature distribution of a susceptor uniform without impairing a mechanical strength of a heater in the apparatus for compound semiconductor, etc. CONSTITUTION:The semiconductor vapor growing apparatus comprises a rotatable susceptor 1 placed with a semiconductor substrate 21 in a water-cooled reaction chamber, and a heater 2 for heating the susceptor 1. The heater 2 is split into an inner heater and an outer peripheral heater, which are electrically connected in parallel, and so controlled that a temperature of the peripheral heater is higher than that of the inner heater.</p> |
