| 摘要 |
PURPOSE:To narrow the interval between a photodetection chip and a light-emitting chip and to enhance the transfer efficiency of light by a method wherein a transparent insulating layer is interposed between the photodetection chip and the light-emitting chip in a photodetection and light-emitting chip wherein the photodetection chip and the light-emitting chip have been stacked and integrated on the same insulating substrate. CONSTITUTION:A recessed part 13 is formed on the surface of an insulating-case substrate 11, a thin filmlike metal interconnection is plated and formed three-dimensionally from the recessed part 13 up to the rear of the insulating-case substrate 11. The metal interconnection is formed of internal electrode parts 15, 16 inside the recessed part 13, of an interconnection part 19 formed on the surface and in a side-face through hole on the insulating-case substrate 11 so as to be continued to the internal electrode parts 15, 16 and of rear electrode parts 21, 22 soldered to an external mounting board. A photodetection chip 24 and a light-emitting chip 23 are stacked sequentially in the thickness direction inside the recessed part 13, a photodetection and light-emitting element 12 which has interposed a transparent insulating layer 25 for electrical insulation between both chips 23, 24 is housed, a light-transmitting resin 28 and a light-shielding resin 29 are filled into the recessed part 13 and a required photodetection and light-emitting element is constituted. |
