发明名称 METHOD OF MAKING HIGH TEMPERATURE OXIDE FILM IN HORIZONTAL TYPE CVD APPARATUS
摘要 The fabrication method comprises the conditions that; the pressure for deposition ranges 2.25-2.75 (Torr); the temperature for deposition ranges 720-780 deg.C; the temperature gradient for deposition varies ±10 - ±20 deg.C from centre to door or to back side; process gases are SiN4 and N2O; a high temperature oxide layer is formed by back-to-bac loading with gage boats having a boat slot spacing of 1/2 in and 9/16 in.
申请公布号 KR940001281(B1) 申请公布日期 1994.02.18
申请号 KR19900004658 申请日期 1990.04.04
申请人 GOLDSTAR ELECTRON CO., LTD. 发明人 PARK, HAE - SU
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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