发明名称 |
METHOD OF MAKING HIGH TEMPERATURE OXIDE FILM IN HORIZONTAL TYPE CVD APPARATUS |
摘要 |
The fabrication method comprises the conditions that; the pressure for deposition ranges 2.25-2.75 (Torr); the temperature for deposition ranges 720-780 deg.C; the temperature gradient for deposition varies ±10 - ±20 deg.C from centre to door or to back side; process gases are SiN4 and N2O; a high temperature oxide layer is formed by back-to-bac loading with gage boats having a boat slot spacing of 1/2 in and 9/16 in.
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申请公布号 |
KR940001281(B1) |
申请公布日期 |
1994.02.18 |
申请号 |
KR19900004658 |
申请日期 |
1990.04.04 |
申请人 |
GOLDSTAR ELECTRON CO., LTD. |
发明人 |
PARK, HAE - SU |
分类号 |
H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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