| 摘要 |
PURPOSE:To provide a semiconductor light emitting element with a small light emission diameter and a high light emission efficiency. CONSTITUTION:A multilayer reflection film layer 3 is provided on a semiconductor substrate 1 where a recess 2 is formed on the upper surface. The multilayer reflection film layer 3 is formed along the recess 2 and has a recessed part 4. An n-type lower clad layer 5, an activated layer 6, a p-type upper clad layer 7, a p-type diffusion stop layer 8, an n-type current block layer 9, and a p-type cap layer 10 are grown on it. Then, p-type impurities are diffused from the cap layer 10 to the upper clad layer and a current constriction region 11 is formed at a position corresponding to the recess 2. A light irradiation window 13 is opened at a p-side electrode 12 which is provided on the cap layer corresponding to the current constriction region 11. |
