| 摘要 |
1,068,189. Semi-conductor devices. SIEMENS-SCHUCKERTWERKE A.G. Sept. 28, 1964 [Sept. 28, 1963], No. 39491/64. Heading H1K. A body 1 of semi-conductor material is heated together with a source device which comprises a known concentration of doping material in a substantially homogeneous layer, so that doping material evaporates from the source device and diffuses into the semiconductor body. The homogeneous layer containing the doping material may take the form of a coating on the inside of an open-ended tube 3, Fig. 1, or on one or more plates 2b, 2c, Fig. 2 (each plate may carry a different doping material), and may be formed by a diffusion process, Fig. 3 (not shown). Suitable materials for the carrier plates 2b, 2c or tube 3 include quartz glass, platinum, silicon, and germanium, with doping material provided by boron, phosphorus, or gold, or an oxide thereof. The process may take place in a neutral, reducing, or oxidizing atmosphere.
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