BIAS CIRCUIT FOR BASE GROUNDED TRANSISTOR,申请号JP19920195774-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	BIAS CIRCUIT FOR BASE GROUNDED TRANSISTOR
摘要
申请公布号	JPH0645827(A)	申请公布日期	1994.02.18
申请号	JP19920195774	申请日期	1992.07.23
申请人	NEC CORP	发明人	NEMOTO KOJI
分类号	H03B5/18;(IPC1-7):H03B5/18	主分类号	H03B5/18
代理机构		代理人
主权项
地址

您可能感兴趣的专利

OPTICAL FIBRE PULLING TOWER

Plant growing device

An improved locking device for wheeled vehicles, more particularly bicycles

METHOD OF AND COMPOSITION FOR INHIBITING CORROSION OF IRON BASE METALS

ELEMENTS FOR CONSTRUCTION OF ROOFS

LINING OF PIPES

AUTOMATIC ROLLING TRAIN

SAIL ASSEMBLY OF VARIABLE PROFILE, REVERSIBLE AND COLLAPSIBLE

BEARING BODY FOR MOTORCYCLE

CHLORHEXIDINE SALT

DISPLAYING AUXILIARY INFORMATION ON A TELEVISION PICTURE

WEIGHING FLOWABLE MATERIALS

CLUTCH DISC WITH TORSIONAL VIBRATION DAMPER

A DEVICE AND METHOD FOR MEASURING PHOTOGRAPHIC TRANSPARENCY DENSITY

TAKE OFF CABINETS FOR DISTRIBUTION TRANSFORMERS

NOISE REDUCTION CIRCUIT FOR A VIDEO SIGNAL

CHARACTER RECOGNITION SYSTEMS AND METHODS

METHOD OF HEAT POLISHING PATTERN CUT GLASSWARE