| 摘要 |
An SCR type memory apparatus which is short in access time, easy in setting current values upon reading and writing and easy in constructing a peripheral circuit with less power supply voltage limitation is described. The semiconductor memory apparatus comprises of a basic cell circuit which includes an SCR type memory cell. The SCR type memory cell includes a pair of pnp transistors and a pair of double emitter transistors. The basic cell circuit also includes a pair of write npn transistors. The collector of each write npn transistor is connected to a voltage holding node of the SCR type memory cell and the base is connected to a word selecting line.
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