发明名称 |
Capacitor for a BiCMOS device |
摘要 |
The invention provides an improved BiCMOS device and a method of fabricating such a BiCMOS device which requires fewer process steps than known fabrication methods. In one embodiment, the invention provides a method of forming an interpoly capacitor in a BiCMOS device which maintains the thickness of the interpoly dielectric in the capacitor while a window is etched for the emitter in a bipolar transistor. The method includes the use of a thin polysilicon layer overlying the oxide layer, which protects the oxide from etching while the emitter window is etched.
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申请公布号 |
US5286991(A) |
申请公布日期 |
1994.02.15 |
申请号 |
US19920935955 |
申请日期 |
1992.08.26 |
申请人 |
PIONEER SEMICONDUCTOR CORPORATION |
发明人 |
HUI, CHIHUNG (JOHN);SZETO, ROGER |
分类号 |
H01L27/06;(IPC1-7):H01L27/02;H01L21/44 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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