发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device has a device for reading stored information out of a memory element of a semiconductor by applying a reading voltage onto a word line; and a single word line clamping circuit for controlling the reading voltage applied onto the word line such that the reading voltage is close to a relatively high threshold voltage of the memory element when the reading voltage is applied onto the word line, the word line clamping circuit being commonly disposed on a plurality of word lines.
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申请公布号 |
US5287307(A) |
申请公布日期 |
1994.02.15 |
申请号 |
US19910645575 |
申请日期 |
1991.01.25 |
申请人 |
RICOH COMPANY, LTD. |
发明人 |
FUKUDA, MINORU;KAMEI, YOJIRO;NAKANO, AKIHISA |
分类号 |
G11C17/00;G11C5/14;G11C8/08;G11C16/06;G11C16/30;(IPC1-7):G11L7/02 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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