发明名称 Semiconductor memory device
摘要 A semiconductor memory device has a device for reading stored information out of a memory element of a semiconductor by applying a reading voltage onto a word line; and a single word line clamping circuit for controlling the reading voltage applied onto the word line such that the reading voltage is close to a relatively high threshold voltage of the memory element when the reading voltage is applied onto the word line, the word line clamping circuit being commonly disposed on a plurality of word lines.
申请公布号 US5287307(A) 申请公布日期 1994.02.15
申请号 US19910645575 申请日期 1991.01.25
申请人 RICOH COMPANY, LTD. 发明人 FUKUDA, MINORU;KAMEI, YOJIRO;NAKANO, AKIHISA
分类号 G11C17/00;G11C5/14;G11C8/08;G11C16/06;G11C16/30;(IPC1-7):G11L7/02 主分类号 G11C17/00
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