| 摘要 |
A turn-off power semiconductor component is proposed which is subdivided into unit cells (EZ) and which comprises, between an anode (A) and a cathode (K) in a semiconductor substrate (1), five layers in the p-n-p-n-p sequence, namely an anode layer (10), an n-type base layer (9), a p-type base layer (8), a turn-off region (6), a cathode region (7) adjacent to the turn-off region and a p-doped p-type short-circuit region (5). In every unit cell (EZ), a first MOSFET (M1), which can be triggered by means of a first insulated gate electrode (G1), is provided on the cathode side for switching between the five-layer structure and a conventional thyristor four-layer structure. A second MOSFET (M2) having a second gate electrode (G2) prevents a breakdown between the p-type short-circuit region (5) and the turn-off region (6) during turn-off. The p-type short-circuit region (5), the turn-off region (6) and the cathode region (7) are introduced into the semiconductor substrate (1) in a self-aligning manner through windows (F1, F2) between the gate electrodes (G1 and G2, respectively). The switchable five-layer structure effectively prevents current filamentation during turn-off. The self-aligning production makes possible a component with precise patterning. <IMAGE>
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