发明名称 |
Coupled quantum well tunable laser |
摘要 |
The present invention is the use of coupled quantum wells in the active region of a semiconductor laser to modulate the frequency and amplitude of the light output of the laser. In a particular embodiment of the present invention the coupled quantum wells are contained in a graded index of refraction semiconductor double heterostructure laser. The active region of this tunable laser consists of two quantum wells having a width of approximately 50 Angstroms or less which are separated by a barrier layer having a width of approximately 20 Angstroms or less. The quantum well material is intrinsic GaAs and the barrier layer is AlxGa1-xAs wherein x=0.23. The active region is surrounded by the double heterostructure in which one side is doped p-type and the second side is doped n-type. The resulting laser is a p-i-n type structure. A reverse bias with respect to the flat band voltage of the p-i-n structure is applied across the p-i-n structure which modulates both the frequency and the intensity of the laser output. The tunable laser is pumped with a variety of conventional means, including both electrical and optical pumping. The modulation of the wavelength is approximately linear over a 1.5 volt operating range. A tunable laser, such as the present invention, having an output wavelength modulated by an electric field is useful in the field of optical communications and computing.
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申请公布号 |
US5287377(A) |
申请公布日期 |
1994.02.15 |
申请号 |
US19930058997 |
申请日期 |
1993.05.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FUKUZAWA, TADASHI;LIU, LING Y.;MENDEZ, EMILIO E. |
分类号 |
H01S5/00;H01S3/0941;H01S5/026;H01S5/04;H01S5/042;H01S5/06;H01S5/062;H01S5/34;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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