发明名称 |
Selective fluorocarbon-based RIE process utilizing a nitrogen additive |
摘要 |
A CHF3-based RIE etching process is disclosed using a nitrogen additive to provide high selectivity of SiO2 or PSG to Al2O3, low chamfering of a photoresist mask, and low RIE lag. The process uses a pressure in the range of about 200-1,000 mTorr, and an appropriate RF bias power, selected based on the size of the substrate being etched. The substrate mounting pedestal is preferably maintained at a temperature of about 0 degrees C. Nitrogen can be provided from a nitrogen-containing molecule, or as N2. He gas can be added to the gas mixture to enhance the RIE lag-reducing effect of the nitrogen.
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申请公布号 |
US5284549(A) |
申请公布日期 |
1994.02.08 |
申请号 |
US19920816190 |
申请日期 |
1992.01.02 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BARNES, MICHAEL S.;CHOW, MELANIE M.;FORSTER, JOHN C.;FURY, MICHAEL A.;KIN, CHANG-CHING;JONES, HARRIS C.;KELLER, JOHN H.;O'NEILL, JAMES A. |
分类号 |
C03C15/00;H01L21/311;(IPC1-7):H01L21/00 |
主分类号 |
C03C15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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