发明名称 Waveguide type photodetector and a method of fabricating the same
摘要 In a waveguide type photodetector for receiving and detecting a light guided thereinto, a groove is formed in a semiconductor substrate, a waveguide layer is formed on the semiconductor substrate, and a light absorbing layer for absorbing a light propagated through a waveguide in the waveguide layer is formed on the waveguide layer. The waveguide is formed as a three-dimensional waveguide formed in the waveguide layer due to the presense of the groove. The three-dimensional waveguide is maintained also under the light absorbing layer since the refractive index of a portion layered on the groove formed in the substrate is made large than that of portions other than this portion layered above the groove.
申请公布号 US5285514(A) 申请公布日期 1994.02.08
申请号 US19920887806 申请日期 1992.05.26
申请人 CANON KABUSHIKI KAISHA 发明人 NOJIRI, HIDETOSHI;HIROKIO, TAMAYO
分类号 G02F1/025;G02B6/12;G02B6/122;G02B6/42;H01L31/0264;H01L31/10;H01L31/112;(IPC1-7):G02B6/10 主分类号 G02F1/025
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