发明名称 |
Heterojunction field effect transistor |
摘要 |
A heterojunction field effect transistor includes a semi-insulating crystalline layer, a pseudomorphic channel layer disposed on the semi-insulating crystalline layer, and an electron supply layer disposed on said pseudomorphic layer. The channel layer has a lattice constant equal to or close to that of the semi-insulating crystalline layer adjacent to semi-insulating crystalline layer and different from the semi-insulating crystalline layer adjacent to the electron supply layer.
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申请公布号 |
US5285087(A) |
申请公布日期 |
1994.02.08 |
申请号 |
US19910719196 |
申请日期 |
1991.06.21 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NARITA, KOICHI;HAYASHI, KAZUO;SONODA, TAKUJI |
分类号 |
H01L29/20;H01L21/338;H01L29/778;H01L29/812;(IPC1-7):H01L31/072;H01L31/109;H01L31/032;H01L31/033 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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