| 摘要 |
A diffusionless source/drain conductor, electrically-erasable, electrically-programmable read-only memory cell is formed at a face of a semiconductor layer (38) of a first conductivity type and includes a source conductor (10), a drain conductor (12), a channel region (18), and a tunnel region (22). Source conductor (10) and drain conductor (12) are disposed to create inversion regions, of a second conductivity type, opposite said first conductivity type, in the source inversion region (14) and drain inversion region (16) of semiconductor layer (38) of the layer semiconductor, upon application of voltage. Thin oxide tunneling window (22) is disposed adjacent source conductor (10). A floating gate (24) disposed adjacent tunneling window can be charged or discharged by Fowler-Nordheim tunneling when a voltage is applied between the inversion created in source inversion region (14) and a control gate (26) insulatively adjacent floating gate (24).
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