| 摘要 |
A solid state image sensing device has a plurality of photo sensing elements arranged in a two-dimensional fashion at pixel units pixel unit in the horizontal and vertical directions. Each of the plurality of photo sensing elements is formed of a vertical selection transistor whose gate electrode is connected to a horizontal selection line and whose source electrode is connected to a vertical signal line. A photoelectric conversion element is provided under a channel region of the vertical selection transistor. A high concentration impurity is buried in lower portions of the source electrode and the channel region. When a voltage is applied to the source electrode, a signal charge which is subjected to a photoelectric conversion by the photoelectric conversion element is reset. Reset noise, Vth irregularity, smear component and the surface dark current can be reduced and blooming is suppressed.
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