发明名称 |
Method and apparatus for providing a faster ones voltage level restore operation in a dram |
摘要 |
There is a DRAM which provides for a faster non-accessed memory cell ones voltage level refresh or restore process. Specifically, the DRAM does not shut down a digit line's voltage pull-up circuitry (PSA) during a write operation. By leaving on the PSA, the digit lines being pulled to a ones voltage level will continue to be pulled up during the write operation. Thus, a non-accessed digit line will reach the ones voltage level in a shorter time than if the PSA were turned off during the write operation.
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申请公布号 |
US5285408(A) |
申请公布日期 |
1994.02.08 |
申请号 |
US19920945206 |
申请日期 |
1992.09.15 |
申请人 |
MICRON SEMICONDUCTOR, INC. |
发明人 |
STARKWEATHER, MICHAEL W.;ZAGAR, PAUL S. |
分类号 |
G11C11/4091;G11C11/4094;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/4091 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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