发明名称 |
Valve and semiconductor fabricating equipment using the same |
摘要 |
Disclosed is a gas valve capable of switching gases to be introduced within a vacuum chamber with high speed thereby enhancing the controllability of the composion of a semiconducting thin film growing on a substrate and shortening the time required for growth of the thin film. The gas valve comprises a bendable film between a pair of parallel plate electrodes whereby operating the film by an electrostatic force and opening and closing a port for releasing gas to a substrate mounted on the wall surface of a gas chamber and a port for exhausting an unnecessary gas to an exhaust passage. The gas valve is mounted in the vicinity of the substrate within the vacuum chamber for supplying a working gas in a minimum amount required for the film growth.
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申请公布号 |
US5284179(A) |
申请公布日期 |
1994.02.08 |
申请号 |
US19920890711 |
申请日期 |
1992.05.29 |
申请人 |
HITACHI, LTD. |
发明人 |
SHIKIDA, MITSUHIRO;SATO, KAZUO;KAWAMURA, YOSHIO;TANAKA, SHINJI;HORIUCHI, YASUAKI;KOIDE, AKIRA;MIYADA, TOSHIMITSU |
分类号 |
F16K31/02;F04B43/04;F15C5/00;F16K99/00;H01L21/205;(IPC1-7):F16K11/24;F16K31/06 |
主分类号 |
F16K31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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