Methods of moisture protection in semiconductor devices utilizing polyimides for inter-metal dielectric

摘要

Integrated circuits include a silicon substrate having multiple conductive metallization lines placed thereon and vertically spaced apart from each other by polyimide insulating layers wherein a moisture resistant barrier layer is completely interposed between the polyimide layers and each metallization line. The moisture resistant barrier retards corrosion of the metallization lines by reaction products formed by the release of water from the polyimide layer by reducing the amount of water which can penetrate to the metallization lines.