| 摘要 |
PURPOSE:To provide a semiconductor energy detector whose sensitivity to an energy beam such as short-wavelength light or the like is high. CONSTITUTION:A P-type epitaxial-layer 24 provided with a CCD 31 is formed on a silicon wafer 35. A P<+> layer 27 is formed in the P-type epitaxial layer 24. A silicon wafer 29 is installed on the upper side of the P-type epitaxial layer 24. In the silicon wafer 29, only a region to photodetect short-wavelength light incident from a window member 40 in a package 28 is etched and removed, and an opening is formed. In a rear-irradiation type semiconductor energy detector provided with the above-mentioned structure, an accumulation state is maintained. Consequently, the detector is made a stable detector whose sensitivity to the short-wavelength light is uniform all over its inside.
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