发明名称 |
ELECTRONIC CIRCUIT AND MANUFACTURE THEREOF |
摘要 |
<p>PURPOSE:To stabilize the manufacture of an anode aluminum oxide transistor by grading hierarchically wirings led to a gate electrode wiring according to their width and optimizing the wirings when manufacturing the anode aluminum oxide transistor. CONSTITUTION:When manufacturing an anode aluminum oxide gate transistor, there are installed a trunk wiring 13, which is the widest in size, and a branch wiring 5, which is narrower than the trunk wiring 13 and a gate electrode wiring 6, which is laid out at the end, thereby forming a circuit layout as described above. This wiring layout dramatically inhibits the difference in the development of anode oxidation produced between the gate electrode wirings 6 at the end. The adhesive properties of an anode oxide film of each of the gate electrode wirings 6 show a virtually constant value. This construction makes it possible to use a dry etching process and process the film to a fine degree and enhance yield as well.</p> |
申请公布号 |
JPH0629279(A) |
申请公布日期 |
1994.02.04 |
申请号 |
JP19920282352 |
申请日期 |
1992.09.28 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
CHIYOU KOUYUU;UOJI HIDEKI;ADACHI HIROKI;YAMAZAKI SHUNPEI |
分类号 |
G02F1/136;C25D11/00;G02F1/1368;H01L21/28;H01L21/306;H01L21/31;H01L21/316;H01L21/3205;H01L21/336;H01L21/70;H01L23/52;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L21/306;H01L21/320;H01L29/784 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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