| 摘要 |
<p>PURPOSE:To enable the exposure of a large size semiconductor element with the breakthrough of limit of semiconductor element to be processed by exposing the part to be exposed with the one part to be exposed being set under the non-exposing condition and then exposing the part to be exposed with the other part being set under the non-exposed condition. CONSTITUTION:A pattern which will become the criterion of the successive photolithography (PEP) process is formed on the one semiconductor element pattern sharing the dummy B region with the PEP process. Next, with this pattern used as the reference, the A region is formed by the PEP process adjacent to the dummy B region. Thereby, semiconductors of such an area of 20mm square or larger which cannot be manufactured with the current exposure apparatus can be developed by the current exposure apparatus.</p> |
