SCHOTTKY BARRIER COMPOUND SEMICONDUCTOR DEVICE

摘要

PURPOSE:To form an excellent Schottky barrier by making to 1X10<21>/cm<3> or more a phosphorus concentration of PSG films that are selectively provided on an n-type Ga-As substrate. CONSTITUTION:An operating layer 42b is formed on an n-type Ga-As substrate 41a to have an n-type Ga-As body 41. A PSG film 42 of a phosphorus concentration 4X10<21>/cm<3> is formed on the layer by the gaseous phase growing method and a exposed surface is selectively removed by the photoetching. After forming an Nb metal layer 43 composing a Schottky barrier with the body 41, and further forming an Mo metal layer 47 and an Au metal layer 44 by the vacuum evaporation, the etching and the alloying by heaat treatment are provided.