| 摘要 |
<p>PURPOSE: To provide a plotting mask with the high contrast of reflection/ absorption in a soft X-ray projection by providing a barrier layer between an absorption layer and a multi-layer reflection layer. CONSTITUTION: In a mask layer 10, a substrate (Si) 11, the multi-layer reflection layer 12 where material layers (Si and Mo) 14 and 15 different in optical constants are stacked alternately, the barrier layer (polyimde) 17 and the absorption layer (Au) 16 are sequentially stacked. A resist layer is deposited on the mask layer 10, and it is etched so as to form a resist pattern 18. Then, an absorption body 16 is etched by reactive ion etching and the resist pattern 18 is removed. Next, when the mask has been inspected, defects 19 and 20 are corrected, and the barrier layer 17 is etched by dry etching in oxygen, the mask pattern is copied on the barrier layer and the mask where the Mo surface of the multi-layer reflection layer is exposed is obtained in a surface area 21. Thus, the pattern plotting of a device, which requires fine dimensions of submicrons are realized.</p> |
