SEMICONDUCTOR LASER DIODE AND MANUFACTURING METHOD THEREOF,申请号JP19920181992-传众专利搜索

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发明名称	SEMICONDUCTOR LASER DIODE AND MANUFACTURING METHOD THEREOF
摘要
申请公布号	JPH0629616(A)	申请公布日期	1994.02.04
申请号	JP19920181992	申请日期	1992.07.09
申请人	NEC CORP	发明人	OSAWA YOICHI
分类号	H01S5/00;H01S5/042;(IPC1-7):H01S3/18	主分类号	H01S5/00
代理机构		代理人
主权项
地址

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