MODELING METHOD OF MOS TRANSISTOR,申请号JP19920184882-传众专利搜索

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发明名称	MODELING METHOD OF MOS TRANSISTOR
摘要
申请公布号	JPH0629528(A)	申请公布日期	1994.02.04
申请号	JP19920184882	申请日期	1992.07.13
申请人	NEC CORP	发明人	SAITO TOSHIYUKI
分类号	H01L29/78;G06F17/50;(IPC1-7):H01L29/784;G06F15/60	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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