| 摘要 |
PURPOSE: To completely remove negative oxide from a silicon surface, without damaging the surface by making an oxygen source in a plasma chamber in a passive state or removing it. CONSTITUTION: Microwave is guided into a chamber 1, and a gas is guided into the chamber 1 through a pipe 13. A wafer 10 is placed on a substrate holder 9. Hydrogen or hydrogen into which a small quantity of argon buffer gas has been mixed can speedily remove a natural oxide layer at a temperature of not more than 200 deg.C for four seconds, without wafer bias, namely, with pure hydrogen, and for one second with hydrogen containing 5% argon. The etching time of pure hydrogen for four minutes can be obtained with 1.2 kW microwave power and the etching time of 5% of Ar and 95% of H2 for one minute by 1.37 kW. Thus, an ECR plasma chamber is used, and the silicon surface which is super-cleaned can be obtained in short time.
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