STACKED I-CELL CAPACITOR AND ITS MANUFACTURE

摘要

PURPOSE: To provide such a three-dimensional polysilicon memory node plate by which I-shaped section can be adjusted and the surface area capacitor plate be increased than the conventional stack type capacitor. CONSTITUTION: The production method for conventional stack type capacitor is improved to produce a three-dimensional stack type capacitor called stack type I cell(SIC). The SIC is a capacitor memory cell used in the production process for DRAMs. The SIC is formed of such a polysilicon memory node 101 structure that extends upward and downward in the I-shaped section and includes a lower part in contact with an active area 21 through an embedded contact 42. This structure forms an SIC capacitor while a dielectric layer 111 is inserted between polysilicons 112 and is covered therewith.