发明名称 METHOD AND APPARATUS FOR REMOVAL OF PHOTORESIST
摘要 PURPOSE:To provide a photoresist-removing method and a photoresist-removing apparatus wherein the replacement of a stripping liquid by a rinsing liquid can be treated uniformly and with good efficiency by a method and a constitution which are comparatively simple regarding the removing method and the removing apparatus of a photoresist used in a photolithographic method when a pattern is formed in the manufacturing process of a semiconductor device and a liquid-crystal display device. CONSTITUTION:In a first rinsing process 7, a stripping liquid 4 which has dissolved a photoresist is removed after the dissolution treatment by the stripping liquid 4 of a photoresist. In the first rinsing process, the stripping liquid is replaced uniformly and with good efficiency by a rinsing liquid which has been jetted uniformly in a direction opposite to the conveyance direction of a substrate 1 and in the width of the conveyance direction of the substrate. Thereby, the rinsing liquid does not stagnate locally when the stripping liquid is replaced by the rinsing liquid. As a result, a local rinsing defect is eliminated, and a semiconductor device and a liquid-crystal display device whose yield is high and whose reliability is excellent can be manufactured.
申请公布号 JPH0629209(A) 申请公布日期 1994.02.04
申请号 JP19920099159 申请日期 1992.04.20
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TAMURA TATSUHIKO;IWASAKI KATSUO;KURODA HIROSHI;INOUE ISAMU
分类号 G03F7/42;H01L21/027;H01L21/30;H01L21/304;(IPC1-7):H01L21/027 主分类号 G03F7/42
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