| 摘要 |
PURPOSE: To provide a method for making polycrystalline silicon which is used as the storage node cell plate of a capacitor in a semiconductor device into texture. CONSTITUTION: This texture-making method of a polycrystalline silicon layer 31 consists of a process for using vapor-core generation by the injection of substance to cause ununiform core growth or by improving growth pressure and causing the uniform core growth of a silicon source itself. When ununiform or uniform vapor-core generation is used, stable and large texture 15 grows in a growing polysilicon, and this can be doped by a known technology. |
