| 摘要 |
PURPOSE:To make a semiconductor device have a structure which can supply a potential simply to a wiring layer formed in a semiconductor substrate and can be formed easily. CONSTITUTION:This device is featured mainly by hating an N-type region 18 formed in a P-type silicon substrate 10, a group of trenches 121 to 124 formed in the substrate 10, a group of N-type regions 141 to 144 which are formed in the substrate 10 from the bottoms, at least, of the trenches forming the group of the trenches 121 to 124 and are brought into contact with each other so as to form a wiring layer 16 and also brought into contact with the N-type region 18, and an electrode 20 which is connected electrically to the N-type region 18 and gives a prescribed potential to the group of the N-type regions 141 to 144 through the N-type region 18. Since the supply of the potential to the wiring layer 16 formed in the substrate 10 is conducted through the N-type region 18 in the device thus constructed, no specific contrivance such as formation of a terminal trench is needed. Accordingly, the device can be formed easily. |
