| 摘要 |
PURPOSE:To make it possible to suppress lowering of an ON current due to the resistance of TFT even when a drain offset length of the TFT is made large due to an error in machining, to maintain a data holding capacity by making a load balance of a memory device excellent thereby and to attain these effects without increasing the number of processes in particular. CONSTITUTION:A semiconductor memory device of a thin film transistor load type wherein a grounding line 12 or a line for applying a negative voltage is provided and so constructed that it can have a channel at least to a channel forming part 10a or a drain offset 10b of a thin film transistor, and it is made a back gate electrode by constructing it so that it can have the channel to the channel forming part of the thin film transistor. |
