| 摘要 |
PURPOSE:To improve a conversion efficiency by decreasing a recombination center through removing an impurity such as CuSe2 existing in the vicinity of a CuInSe2 surface and also by removing the uncombined hand of Cu and In. CONSTITUTION:After Mo electrode layer 2 is formed, Cu thin-film layer and In thin-film layer are formed continuously and a CuInSe2 thin-film layer 3 is formed by selenide formation method. Subsequently, an impurity such as CuSe2 in the vicinity of the surface of the CuInSe2 thin-film layer is removed by etching through the immersion in ammonium polysulfide solution or ammonium sulfide solution so that a film mainly composed of S is formed on the surface of the thin-film layer. Thus, a recombination center decreases and the conversion efficiency of a solar battery improves. Also, this method has the effect of simplifying a manufacturing process and reducing a cost. |
